affected by scaling, from an ESD protection perspectiveIt is the main objective of this work to address the scaling and design challenges of ESD protection in deeply scaled technologiesFirst, the thesis introduces the on chip ESD events, the scaling and design challenges, and the nomenclatures necessary for later chapters.

Figure I V curve of an SCR based ESD protection structure Silicon Measured Data A standard low voltage SCR based ESD protection structure was fabricated in the µm process and the silicon result was measured for DC leakage current, triggering voltage, and ESD immunityFigure is a screenshot of the layout of the ESD structure that was

Download Citation Design of SCR based ESD protection circuit for V I O and V power clamp In this paper, MOS triggered sfficon controlled rectifier (SCR) based electrostatic discharge

system level ESD or EFT testsUnder the normal circuit operation condition (V DD = V), the output state of the new proposed SCR based transient detection circuit is kept at V as logic After the transient disturbance, the output state will transit from FigA traditional solution to overcome the system level electrical

In result, the proposed ESD protection device has double snapback characteristic, and the first and the second trigger voltages are and V, respectivelyAnd the proposed device has high holding voltage of V and high triggering current of mAThese characteristics permit to apply the proposed device to V

From the results, it can be concluded that the V I O and V power clamp ESD protection circuits are appropriate for the ESD design window and that they are expected to further improve the reliability of the low and high voltage ICs, compared to the conventional SCR based ESD protection circuit.

This paper reviews the application of SCRbased ESD protection circuits in advanced CMOS SOI technologiesThe devices are integrated in a flexible modular circuit design technique allowing for independent optimization of key characteristicsThe IC application focus is on sensitive IOs, i.e(ultra)

ESD protection circuit, and to apply it to mobile application ICs that use a V I OMOS Triggered SCR Based ESD Protection Circuit Simulation and TLP Characteristics The cross section and equivalent circuit of an MOS triggered SCR based ESD protection circuit are shown in Figs(a) and (b)The structure of the MOS triggered SCR based ESD

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[Show full abstract] MOS triggered SCR based ESD protection circuit for V I OThis lowers the breakdown voltage of the SCR by providing a trigger current to the P well of the SCR.

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This paper introduces an SCR based ESD protection design for silicon on insulator (SOI) technologiesSCR devices or thyristors, as they are sometimes better known, have long since been used in Bulk CMOS to provide very area efficient, high performance ESD protection for a wide variety of circuit applications.